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Type Designator: MJE340

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage Vcb : 300 V

Maximum Collector-Emitter Voltage Vce : 300 V

Maximum Emitter-Base Voltage Veb : 3 V

Maximum Collector Current Ic max : 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO126

MJE340 Transistor Equivalent Substitute - Cross-Reference Search

MJE340 Datasheet (PDF)

1.1. mje340g.pdf Size:67K _update

MJE340 Plastic Medium-Power NPN Silicon Transistor This device is useful for high-voltage general purpose applications. Features http://onsemi.com • Suitable for Transformerless, Line-Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating 0.5 AMPERE for High Reliability • Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON 300 VOLTS, 20 WATT

1.2. mje340re.pdf Size:117K _motorola

Order this document MOTOROLA by MJE340/D SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN 0.5 AMPERE Silicon Transistor POWER TRANSISTOR NPN SILICON . . . useful for high–voltage general purpose applications. 300 VOLTS • Suitable for Transformerless, Line–Operated Equipment 20 WATTS • Thermopad Construction Provides High Power Dissipation Rating for High Reliability III

1.3. mje340-mje350.pdf Size:66K _st

MJE340 MJE350 COMPLEMETARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a silicon epitaxial planar NPN 1 2 transistor intended for use in medium power 3 linear and switching applications.It is mounted in SOT-32. The complementary PNP type is MJE350. SOT-

1.4. mje340 mje350.pdf Size:501K _st

MJE340 MJE350 ® COMPLEMETARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 1 2 The MJE340 is a Silicon Epitaxial Planar NPN 3 transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32. SOT-32 The complementary P

1.5. mje340.pdf Size:37K _fairchild_semi

MJE340 High Voltage General Purpose Applications • High Collector-Emitter Breakdown Voltage • Suitable for Transformer • Complement to MJE350 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-B

1.6. mje340-d.pdf Size:67K _onsemi

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MJE340 Plastic Medium-Power NPN Silicon Transistor This device is useful for high-voltage general purpose applications. Features http://onsemi.com • Suitable for Transformerless, Line-Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating 0.5 AMPERE for High Reliability • Pb-Free Package is Available* POWER TRANSISTOR NPN SILICON 300 VOLTS, 20 WATTS MAXIMU

1.7. mje340.pdf Size:238K _cdil

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE340 TO126 Plastic Package E C B For use in High Voltage General Purpose Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 300 V Collector Base Voltage VCBO 300 V VEBO Emitter Base Voltage 3.0 V IC Coll

1.8. mje340t.pdf Size:229K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE340T DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) ·DC Current Gain- : hFE = 100(Min) @ IC= 50mA ·Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@ IC= 50mA APPLICATIONS ·Designed for high voltage and general purpose applications. ABSOLUTE MAXIMUM RA

1.9. mje340.pdf Size:115K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE340 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 300 V(Min) ·DC Current Gain- : hFE = 100(Min) @ IC= 50mA ·Low Collector Saturation Voltage- : VCE(sat) = 1.0V(Max.)@ IC= 50mA ·Complement to Type MJE350 APPLICATIONS ·Designed for high voltage and general purpose applic

Datasheet: MJE3311, MJE3312, MJE3370, MJE3371, MJE33A, MJE33B, MJE33C, MJE34, 2N2222A, MJE340K, MJE341, MJE341K, MJE3439, MJE344, MJE3440, MJE344K, MJE345.

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